Ion beam lithography system
Patent
·
OSTI ID:1175448
A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.
- Research Organization:
- Univ. of California, Oakland, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC03-76SF00098
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Number(s):
- 6,924,493
- Application Number:
- 09/641,467
- OSTI ID:
- 1175448
- Country of Publication:
- United States
- Language:
- English
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