Demonstration of electronic pattern switching and 10x pattern demagnification in a maskless micro-ion beam reduction lithography system

Conference · Fri May 31 04:00:00 EDT 2002

OSTI ID:799568

Ngo, V V ^[1]; Akker, B; Leung, K N; Noh, I; Scott, K L; Wilde, S

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1. LBNL Library

A proof-of-principle ion projection lithography (IPL) system called Maskless Micro-ion beam Reduction Lithography (MMRL) has been developed and tested at the Lawrence Berkeley National Laboratory (LBNL) for future integrated circuits (ICs) manufacturing and thin film media patterning [1]. This MMRL system is aimed at completely eliminating the first stage of the conventional IPL system [2] that contains the complicated beam optics design in front of the stencil mask and the mask itself. It consists of a multicusp RF plasma generator, a multi-beamlet pattern generator, and an all-electrostatic ion optical column. Results from ion beam exposures on PMMA and Shipley UVII-HS resists using 75 keV H+ are presented in this paper. Proof-of-principle electronic pattern switching together with 10x reduction ion optics (using a pattern generator made of nine 50-{micro}m switchable apertures) has been performed and is reported in this paper. In addition, the fabrication of a micro-fabricated pattern generator [3] on an SOI membrane is also presented.

• Research Organization: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Director, Office of Science (US)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 799568
• Report Number(s): LBNL--49346; B& R YN0100000
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
APERTURES
BEAM OPTICS
DESIGN
FABRICATION
INTEGRATED CIRCUITS
ION BEAMS
MANUFACTURING
MEMBRANES
OPTICS
PHOTON BEAMS
PLASMA
THIN FILMS