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Title: Silicon micro-mold and method for fabrication

Abstract

The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon micro-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

Inventors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175199
Patent Number(s):
6,841,339
Application Number:
10/072,394
Assignee:
Sandia National Laboratories
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Morales, Alfredo M. Silicon micro-mold and method for fabrication. United States: N. p., 2005. Web.
Morales, Alfredo M. Silicon micro-mold and method for fabrication. United States.
Morales, Alfredo M. Tue . "Silicon micro-mold and method for fabrication". United States. https://www.osti.gov/servlets/purl/1175199.
@article{osti_1175199,
title = {Silicon micro-mold and method for fabrication},
author = {Morales, Alfredo M.},
abstractNote = {The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon micro-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.},
doi = {},
url = {https://www.osti.gov/biblio/1175199}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {1}
}

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Works referenced in this record:

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