Metal-assisted chemical etch porous silicon formation method
Patent
·
OSTI ID:1175032
A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.
- Research Organization:
- Univ. of Illinois at Urbana-Champaign, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-91-ER-45439
- Assignee:
- The Board of Trustees of the University of Illinois (Urbana, IL)
- Patent Number(s):
- 6,790,785
- Application Number:
- 09/662,682
- OSTI ID:
- 1175032
- Country of Publication:
- United States
- Language:
- English
Chemical etching of porous silicon in diluted hydrofluoric acid
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journal | December 1998 |
A role of illumination during etching to porous silicon oxidation
|
journal | August 1999 |
Effects of Wet Etching on Photoluminescence of Porous Silicon
|
journal | January 2000 |
Preparation of thin porous silicon layers by stain etching
|
journal | April 1997 |
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