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Title: Metal-assisted chemical etch porous silicon formation method

Abstract

A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

Inventors:
; ;
Publication Date:
Research Org.:
The Board of Trustees of the University of Illinois, Urbana, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175032
Patent Number(s):
6,790,785
Application Number:
09/662,682
Assignee:
The Board of Trustees of the University of Illinois (Urbana, IL)
DOE Contract Number:  
FG02-91-ER-45439
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Li, Xiuling, Bohn, Paul W., and Sweedler, Jonathan V. Metal-assisted chemical etch porous silicon formation method. United States: N. p., 2004. Web.
Li, Xiuling, Bohn, Paul W., & Sweedler, Jonathan V. Metal-assisted chemical etch porous silicon formation method. United States.
Li, Xiuling, Bohn, Paul W., and Sweedler, Jonathan V. Tue . "Metal-assisted chemical etch porous silicon formation method". United States. https://www.osti.gov/servlets/purl/1175032.
@article{osti_1175032,
title = {Metal-assisted chemical etch porous silicon formation method},
author = {Li, Xiuling and Bohn, Paul W. and Sweedler, Jonathan V.},
abstractNote = {A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {9}
}

Patent:

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