Metal-assisted chemical etch porous silicon formation method

Patent · Tue Sep 14 00:00:00 EDT 2004

OSTI ID:1175032

Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

• Research Organization: Univ. of Illinois at Urbana-Champaign, IL (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: FG02-91-ER-45439
• Assignee: The Board of Trustees of the University of Illinois (Urbana, IL)
• Patent Number(s): 6,790,785
• Application Number: 09/662,682
• OSTI ID: 1175032
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE