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Title: Process for growing epitaxial gallium nitride and composite wafers

Patent ·
OSTI ID:1174323
; ; ;

A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.

Research Organization:
Univ. of California, Oakland, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC03-76F00098
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
6,563,144
Application Number:
09/824,843
OSTI ID:
1174323
Country of Publication:
United States
Language:
English

References (11)

Effect of Si, Mg, and Mg–Zn doping on structural properties of a GaN layer grown by metalorganic chemical vapor deposition journal December 2001
High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures journal July 1995
Paul Ivan Korner 1925–2012 journal January 2013
B Vitamins and Fatty Acids: What Do They Share with Small Vessel Disease-Related Dementia? journal November 2019
Thermal Annealing Effects on P-Type Mg-Doped GaN Films journal February 1992
The Hitran Molecular Spectroscopic Database and Hawks (Hitran Atmospheric Workstation): 1996 Edition journal November 1998
InN and ln1−XGaX N: calculation of hall mobilities and effects of alloy disorder and dislocation scatterings journal August 2012
Atomic Scale Indium Distribution in a G a N / I n 0.43 G a 0.57 N / A l 0.1 G a 0.9 N Quantum Well Structure journal November 1997
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) journal December 1989
The working principle of the hollow-anode plasma source journal November 1995
The effect of dielectric heterogeneity on the pyroelectric response of PVDF journal January 1998

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Related Subjects

36 MATERIALS SCIENCE