Epitaxial growth of silicon for layer transfer

Patent · 24 March 2015

OSTI ID:1174201

Teplin, Charles; Branz, Howard M

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC36-99GO10337
• Assignee: Alliance for Sustainable Energy, LLC (Golden, CO)
• Patent Number(s): 8,987,115
• Application Number: 13/059,830
• OSTI ID: 1174201
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE