Method for rapid, controllable growth and thickness, of epitaxial silicon films

Wang, Qi; Stradins, Paul; Teplin, Charles; Branz, Howard M

Method for rapid, controllable growth and thickness, of epitaxial silicon films

Patent · Tue Oct 13 00:00:00 EDT 2009

OSTI ID:1001799

Wang, Qi ^[1]; Stradins, Paul ^[2]; Teplin, Charles ^[3]; Branz, Howard M ^[3]

Littleton, CO
Golden, CO
Boulder, CO

A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

Research Organization:: Midwest Research Institute

Sponsoring Organization:: USDOE

DOE Contract Number:: AC36-99GO10337

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO)

Patent Number(s):: 7,601,215

Application Number:: 11/560,886

OSTI ID:: 1001799

Country of Publication:: United States

Language:: English

References (13)

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Physics of Solid-Phase Epitaxy of Hydrogenated Amorphous Silicon for Thin Film Si Photovoltaics Stradins, Paul; Yan, Yanfa; Reedy, Robert MRS Proceedings, Vol. 910 https://doi.org/10.1557/PROC-0910-A15-05	journal	January 2006
Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation Roth, J. A.; Olson, G. L.; Jacobson, D. C. Applied Physics Letters, Vol. 57, Issue 13 https://doi.org/10.1063/1.103477	journal	September 1990
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