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Method for rapid, controllable growth and thickness, of epitaxial silicon films

Patent ·
OSTI ID:1001799
 [1];  [2];  [3];  [3]
  1. Littleton, CO
  2. Golden, CO
  3. Boulder, CO
+ Show Author Affiliations
A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.
Research Organization:
Midwest Research Institute
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-99GO10337;
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Number(s):
7,601,215
Application Number:
11/560,886
OSTI ID:
1001799
Country of Publication:
United States
Language:
English

References (13)

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Explanation of the limiting thickness observed in low-temperature silicon epitaxy journal November 2000
Silicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement journal April 1985
Self-consistent pseudopotential calculations for Si (111) surfaces: Unreconstructed (1×1) and reconstructed (2×1) model structures journal November 1975
Role of hydrogen desorption in the chemical-vapor deposition of Si(100) epitaxial films using disilane journal July 1991
Epitaxial growth of Fe-Si compounds on the silicon (111) face journal December 1992
Atomic Structure of Clean Si(113) Surfaces: Theory and Experiment journal September 1994
How deposition parameters control growth dynamics of nc-Si deposited by hot-wire chemical vapor deposition journal January 2006
Roughness, impurities and strain in low-temperature epitaxial silicon films grown by tantalum filament hot-wire chemical vapor deposition journal January 2006
Physics of Solid-Phase Epitaxy of Hydrogenated Amorphous Silicon for Thin Film Si Photovoltaics journal January 2006

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