Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching

Journal Article · Fri Nov 30 04:00:00 EST 2012 · Journal of Vacuum Science and Technology B

OSTI ID:1172664

Cybart, Shane; Roediger, Peter; Ulin-Avila, Erick; Wu, Stephen; Wong, Travis; Dynes, Robert

We demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure the plasma has a large dark space region where the etchant ions have very large highly-directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch we create three-dimensional mask profiles.

• Research Organization: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: AC02-05CH11231
• OSTI ID: 1172664
• Report Number(s): LBNL-6086E
• Journal Information: Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
reactive ion etching
nanolithography