Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching
Journal Article
·
· Journal of Vacuum Science and Technology B
OSTI ID:1172664
We demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure the plasma has a large dark space region where the etchant ions have very large highly-directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch we create three-dimensional mask profiles.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 1172664
- Report Number(s):
- LBNL-6086E
- Journal Information:
- Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B
- Country of Publication:
- United States
- Language:
- English
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