Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics

Patent ·
OSTI ID:1169631

Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of geometrically ordered multi-crystalline silicon may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm is provided.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
Assignee:
AMG Idealcast Solar Corporation (Wayne, PA)
Patent Number(s):
8,951,344
Application Number:
11/624,411
OSTI ID:
1169631
Country of Publication:
United States
Language:
English

References (10)

Bulk multicrystalline silicon growth for photovoltaic (PV) application journal April 2008
Production of low cost silicon wafers by continuous casting method-development of drip-controlled method
  • Goda, S.; Moritani, T.; Hatanaka, Y.
  • Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) https://doi.org/10.1109/WCPEC.1994.519953
conference January 1994
Directionally solidified solar-grade silicon using carbon crucibles journal April 1979
Scanning Spectral Response Measurements of Large Grain Polysilicon Solar Cells for Process Optimization book January 1981
Microstructure and Electrical Properties of some Multicrystalline Silicon Billets Continuously Cast in a Cold Crucible journal May 1996
Some Applications of Cold Crucible Technology for Silicon Photovoltaic Material Preparation journal January 1985
Development of a rapid solidification process with a double-roller method journal February 1988
Electromagnetic continuous pulling process compared to current casting processes with respect to solidification characteristics journal April 2002
Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique journal July 2005
Relaxation of thermal stresses by dislocation flow and multiplication in the continuous casting of silicon journal May 1997