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Methods for manufacturing geometric multi-crystalline cast materials

Patent ·
OSTI ID:1109105
Methods are provided for casting one or more of a semi-conductor, an oxide, and an intermetallic material. With such methods, a cast body of a geometrically ordered multi-crystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm.
Research Organization:
NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
Sponsoring Organization:
USDOE
Assignee:
Advanced Metallurgical Group Idealcast Solar Corp. (Wayne, PA)
Patent Number(s):
8,591,649
Application Number:
12/670,236
OSTI ID:
1109105
Country of Publication:
United States
Language:
English

References (9)

Production of low cost silicon wafers by continuous casting method-development of drip-controlled method
  • Goda, S.; Moritani, T.; Hatanaka, Y.
  • Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) https://doi.org/10.1109/WCPEC.1994.519953
conference January 1994
Directionally solidified solar-grade silicon using carbon crucibles journal April 1979
Numerical and Experimental Study of the Electromagnetic Continuous Casting of Silicon journal January 2005
Microstructure and Electrical Properties of some Multicrystalline Silicon Billets Continuously Cast in a Cold Crucible journal May 1996
Some Applications of Cold Crucible Technology for Silicon Photovoltaic Material Preparation journal January 1985
Development of a rapid solidification process with a double-roller method journal February 1988
Electromagnetic continuous pulling process compared to current casting processes with respect to solidification characteristics journal April 2002
Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique journal July 2005
Relaxation of thermal stresses by dislocation flow and multiplication in the continuous casting of silicon journal May 1997

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