Electrodeposited copper front metallization for silicon heterojunction solar cells: materials and processes

Conference · Mon Oct 20 04:00:00 EDT 2014

OSTI ID:1167172

Geissbühler, J. ^[1]; Martin de Nicolas, S.; Faes, A.; Lachowicz, A.; Tomasi, A.; Paviet-Salomon, B.; Lachenal, D.; Papet, P.; Badel, N.; Barraud, L.; Descoeudres, A.; Despeisse, M.; De Wolf, S.; Ballif, C.

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1. Arizona State University

Even though screen-printing of low-temperature silver paste remains the state-of-the-art technique for the front-metallization of SHJ solar cells, recent studies have demonstrated large efficiency improvements when copper-electroplated contacts are used instead of screen-printed ones. However, due to the new materials and the new processes introduced by this technique, it is crucial to individually investigate their compatibility with the SHJ cell structure. In this study, we present a detailed analysis of how the performances of SHJ devices may be modified by these new materials and processes. First, effects on the amorphous silicon (a-Si:H) passivation have been studied for various processes such as DI water rinsing, dips in a copper removal solution and direct evaporation of copper on the a-Si:H. Finally, copper electroplating technique has been adapted in order to be applied to more complex cell structures such as high-efficiency IBC-SHJ.

• Research Organization: École Polytechnique Fédérale de Lausanne
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• Contributing Organization: École Polytechnique Fédérale de Lausanne
• DOE Contract Number: EE0006335
• OSTI ID: 1167172
• Report Number(s): DOE-ASU-6335-004
• Country of Publication: United States
• Language: English