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Title: Method of fabricating vertically aligned group III-V nanowires

Patent ·
OSTI ID:1164348
;

A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
8,895,337
Application Number:
13/743,433
OSTI ID:
1164348
Country of Publication:
United States
Language:
English

References (22)

Coalesced nanowire structures with interstitial voids and method for manufacturing the same patent January 2013
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Nanostructured Device patent-application October 2011
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Cited By (3)

Light emitting device and method for manufacturing light emitting device patent May 2017
Light emitting device and method for manufacturing light emitting device patent May 2017
Vertical nanowire semiconductor structures patent October 2016

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