Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Modeling of temperature and excitation dependences of efficiency in an InGaN light-emitting diode

Journal Article · · Optics Express
DOI:https://doi.org/10.1364/OE.22.001413· OSTI ID:1160978
Research Organization:
Energy Frontier Research Centers (EFRC); EFRC for Solid State Lighting Science (SSLS)
Sponsoring Organization:
USDOE SC Office of Basic Energy Sciences (SC-22)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1160978
Journal Information:
Optics Express, Journal Name: Optics Express Vol. 22
Country of Publication:
United States
Language:
English

Similar Records

Modeling of temperature and excitation dependences of efficiency in an InGaN light-emitting diode
Journal Article · Tue Dec 31 23:00:00 EST 2013 · Optics Express · OSTI ID:1383209
Modeling the Temperature and Excitation Dependences of Efficiency in InGaN Light-Emitting Diodes (invited).
Conference · Mon Jul 01 00:00:00 EDT 2013 · OSTI ID:1666032
Modeling Excitation-Dependent Bandstructure Effects on InGaN Light-Emitting Diode Efficiency.
Journal Article · Sat Oct 01 00:00:00 EDT 2011 · Optics Express · OSTI ID:1106450

Related Subjects

solar (photovoltaic)
solid state lighting
phonons
materials and chemistry by design
optics
synthesis (novel materials)