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Modeling Excitation-Dependent Bandstructure Effects on InGaN Light-Emitting Diode Efficiency.

Journal Article · Sat Oct 01 00:00:00 EDT 2011 · Optics Express

DOI:https://doi.org/10.1364/OE.19.021818· OSTI ID:1106450

Chow, Weng W.

Abstract not provided.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1106450

Report Number(s):: SAND2011-7339J; 464797

Journal Information:: Optics Express, Journal Name: Optics Express Journal Issue: 22 Vol. 19; ISSN 1094-4087

Country of Publication:: United States

Language:: English

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