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Title: Effect of Microstructure on the Dielectric Properties of Compositionally Graded (BaSr)TiO3 Films.

Abstract

Abstract not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1148224
Report Number(s):
SAND2007-2608J
Journal ID: ISSN 0021-8979; 523185
DOE Contract Number:
DE-AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 102; Journal Issue: 5; Related Information: Proposed for publication in Journal of Applied Physics.
Country of Publication:
United States
Language:
English

Citation Formats

Sigman, Jennifer Kate, Clem, Paul Gilbert, Nordquist, Christopher Daniel, Richardson, Jacob J., and dawley, jeff t.. Effect of Microstructure on the Dielectric Properties of Compositionally Graded (BaSr)TiO3 Films.. United States: N. p., 2007. Web. doi:10.1063/1.2775922.
Sigman, Jennifer Kate, Clem, Paul Gilbert, Nordquist, Christopher Daniel, Richardson, Jacob J., & dawley, jeff t.. Effect of Microstructure on the Dielectric Properties of Compositionally Graded (BaSr)TiO3 Films.. United States. doi:10.1063/1.2775922.
Sigman, Jennifer Kate, Clem, Paul Gilbert, Nordquist, Christopher Daniel, Richardson, Jacob J., and dawley, jeff t.. Mon . "Effect of Microstructure on the Dielectric Properties of Compositionally Graded (BaSr)TiO3 Films.". United States. doi:10.1063/1.2775922.
@article{osti_1148224,
title = {Effect of Microstructure on the Dielectric Properties of Compositionally Graded (BaSr)TiO3 Films.},
author = {Sigman, Jennifer Kate and Clem, Paul Gilbert and Nordquist, Christopher Daniel and Richardson, Jacob J. and dawley, jeff t.},
abstractNote = {Abstract not provided.},
doi = {10.1063/1.2775922},
journal = {Journal of Applied Physics},
number = 5,
volume = 102,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}
  • Abstract not provided.
  • Compositionally graded (Ba{sub 1-x}Sr{sub x})TiO{sub 3} (BST) thin films, with x decreasing from 0.3 to 0, were deposited on Pt/Ti/SiO{sub 2}/Si and Ru/SiO{sub 2}/Si substrates by radio frequency magnetron sputtering technology. The microstructure and dielectric properties of the graded BST thin films were investigated. It was found that the films on Ru electrode have better crystallization, and that RuO{sub 2} is present between the Ru bottom electrode and the graded BST thin films by X-ray diffraction and SEM analysis. Dielectric measurement reveals that the graded BST thin films deposited on Ru bottom electrode have higher dielectric constant and tunability. Themore » enhanced dielectric behavior is attributed to better crystallization as well as smaller space charge capacitance width and the formation of RuO{sub 2} that is more compatible with the BST films. The graded BST films on Ru electrode show higher leakage current due to lower barrier height and rougher surface of bottom electrode.« less
  • Compositionally-graded (Ba{sub 1-x}Sr{sub x})TiO{sub 3} (BST) epitaxial thin films (with x decreasing from 0.25 to 0.0) were deposited by pulsed laser deposition on (100)LaAlO{sub 3} (LAO) single-crystal substrates covered with a conductive La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO) layer as a bottom electrode. X-ray and electron diffraction patterns demonstrate that the entire graded film has a single-crystal cubic structure. The epitaxial relationship between BST, LSCO, and LAO can be described as (100){sub BST} parallel (100){sub LSCO} parallel (100){sub LAO}; [001]{sub BST} parallel [001]{sub LSCO} parallel [001]{sub LAO}. Cross-sectional transmission electron microscopy (TEM) images reveal that both the BST films and themore » LSCO bottom electrodes have sharp interfaces and overall uniform thickness across the entire specimen, and that they grow with a columnar structure. Planar TEM images show that the graded films exhibit granular and/or polyhedral morphologies with an average grain size of 50 nm. High-resolution TEM images reveal aligned rectangular-shaped voids in the graded BST film, with length size of 12-17 nm, and width of 5-8 nm along the <001> direction in the (100) plane.« less
  • We report abnormal ferroelectric properties of compositionally graded Pb(Zr,Ti)O{sub 3} thin films on LaNiO{sub 3}-coated SiO{sub 2}/Si substrates, where Pb(Zr,Ti)O{sub 3} and LaNiO{sub 3} films were prepared by a metalorganic decomposition technique and a sol{endash}gel technique, respectively. It was found that the hysteresis loops of the Pb(Zr,Ti)O{sub 3} graded films measured by the conventional Sawyer{endash}Tower method shifted along the polarization axis, i.e., they showed polarization offsets when applied by an alternating electric field. The polarization offsets were 82.5 {mu}C/cm{sup 2} at 270 kV/cm and 62.5 {mu}C/cm{sup 2} at 185 kV/cm for the up-graded film and the down-graded film, respectively. Themore » absolute magnitude of the polarization offsets was closely related to the magnitude of the driving electric field, and the direction of the polarization offsets depended on the direction of the composition gradient with respect to the substrate. Analysis indicated that the polarization offsets did not originate from asymmetric contact effects, oxygen vacancies, alignment of defect dipoles, and/or electron injection. These results showed that polarization offsets in hysteresis loops were the intrinsic characteristic of the compositionally graded Pb(Zr,Ti)O{sub 3} thin films. {copyright} 2001 American Institute of Physics.« less
  • Abstract not provided.