Modeling fast-transient defect evolution and carrier recombination in pulse-neutron-irradiated Si devices.
Conference
·
OSTI ID:1147467
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1147467
- Report Number(s):
- SAND2007-4874C; 522153
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of 14 MeV neutron flux on defects in Si photodiode devices.
Electrical Effects from Transient Neutron Irradiation of Silicon Devices.
Effect of Flux on the Defects and Electrical Behavior in Si Devices irradiated with He Ions.
Conference
·
Mon Apr 01 00:00:00 EDT 2019
·
OSTI ID:1639664
Electrical Effects from Transient Neutron Irradiation of Silicon Devices.
Conference
·
Tue Aug 01 00:00:00 EDT 2006
·
OSTI ID:1264226
Effect of Flux on the Defects and Electrical Behavior in Si Devices irradiated with He Ions.
Conference
·
Wed Aug 01 00:00:00 EDT 2018
·
OSTI ID:1582259