Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Time Evolution of the Screening of Piezoelectric Fields in InGaN Quantum Wells.

Journal Article · · IEEE Journal of Quantum Electronics
OSTI ID:1147182

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1147182
Report Number(s):
SAND2007-4551J; 522383
Journal Information:
IEEE Journal of Quantum Electronics, Journal Name: IEEE Journal of Quantum Electronics
Country of Publication:
United States
Language:
English

Similar Records

Growth of InGaN and InGaN/InGaN Quantum Wells by Plasma Assisted Molecular Beam Epitaxy.
Journal Article · Fri Feb 29 23:00:00 EST 2008 · Journal of Crystal Growth · OSTI ID:1145863

Mechanisms for Enhanced Quantum Efficiency of InGaN Quantum Wells Grown on InGaN Underlayers.
Conference · Mon Oct 01 00:00:00 EDT 2007 · OSTI ID:1719012

Luminescence Efficiency Limitations of InGaN Quantum Wells.
Conference · Sun Feb 28 23:00:00 EST 2010 · OSTI ID:1673484

Related Subjects