Growth of InGaN and InGaN/InGaN Quantum Wells by Plasma Assisted Molecular Beam Epitaxy.
Journal Article
·
· Journal of Crystal Growth
OSTI ID:1145863
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1145863
- Report Number(s):
- SAND2008-2070J; 518930
- Journal Information:
- Journal of Crystal Growth, Journal Name: Journal of Crystal Growth
- Country of Publication:
- United States
- Language:
- English
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