Negative bias temperature instability and relaxation in HfSiON gate stack based field effect devices.
Journal Article
·
· Applied Physics Letters
OSTI ID:1145432
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1145432
- Report Number(s):
- SAND2008-1916J; 518776
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters
- Country of Publication:
- United States
- Language:
- English
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