skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Impact of charged defects on silicon MOS quantum dots.

Conference ·
OSTI ID:1143483

Abstract not provided.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1143483
Report Number(s):
SAND2011-5777C; 481991
Resource Relation:
Conference: Proposed for presentation at the 2011 International Workshop On Silicon Quantum Electronics held August 14-15, 2011 in Denver, CO.
Country of Publication:
United States
Language:
English