Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias.

Conference ·
OSTI ID:1069022

Abstract Not Provided

Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1069022
Report Number(s):
SAND2012-1021C
Country of Publication:
United States
Language:
English

Similar Records

Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias.
Conference · Sat Dec 31 23:00:00 EST 2011 · OSTI ID:1062789

Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias.
Conference · Wed Aug 01 00:00:00 EDT 2012 · OSTI ID:1061180

Impact of charged defects on silicon MOS quantum dots.
Conference · Mon Aug 01 00:00:00 EDT 2011 · OSTI ID:1143483

Related Subjects