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Title: Wafer-Level Step-Stressing of InGaP/GaAs HBTs.

Conference ·
OSTI ID:1143307

Abstract not provided.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1143307
Report Number(s):
SAND2014-3965C; 517708
Resource Relation:
Conference: Proposed for presentation at the 225th Electrochemical Society Meeting held May 11-15, 2014 in Orlando, FL.
Country of Publication:
United States
Language:
English

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