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Title: Wafer-Level Step-Stressing of InGaP/GaAs HBTs.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1143307
Report Number(s):
SAND2014-3965C
517708
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 225th Electrochemical Society Meeting held May 11-15, 2014 in Orlando, FL.
Country of Publication:
United States
Language:
English

Citation Formats

Baca, Albert G., Kotobi, Joshua Ali, Fortune, Torben Ray, Gorenz, Alan, Klem, John Frederick, Briggs, Ronald D., Clevenger, Jascinda, and Patrizi, Gary A. Wafer-Level Step-Stressing of InGaP/GaAs HBTs.. United States: N. p., 2014. Web.
Baca, Albert G., Kotobi, Joshua Ali, Fortune, Torben Ray, Gorenz, Alan, Klem, John Frederick, Briggs, Ronald D., Clevenger, Jascinda, & Patrizi, Gary A. Wafer-Level Step-Stressing of InGaP/GaAs HBTs.. United States.
Baca, Albert G., Kotobi, Joshua Ali, Fortune, Torben Ray, Gorenz, Alan, Klem, John Frederick, Briggs, Ronald D., Clevenger, Jascinda, and Patrizi, Gary A. Thu . "Wafer-Level Step-Stressing of InGaP/GaAs HBTs.". United States. doi:. https://www.osti.gov/servlets/purl/1143307.
@article{osti_1143307,
title = {Wafer-Level Step-Stressing of InGaP/GaAs HBTs.},
author = {Baca, Albert G. and Kotobi, Joshua Ali and Fortune, Torben Ray and Gorenz, Alan and Klem, John Frederick and Briggs, Ronald D. and Clevenger, Jascinda and Patrizi, Gary A.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu May 01 00:00:00 EDT 2014},
month = {Thu May 01 00:00:00 EDT 2014}
}

Conference:
Other availability
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