Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Wafer-Level Step-Stressing of InGaP/GaAs HBTs.

Journal Article · · ECS Transactions
; ; ; ; ; ; ;
Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1141216
Report Number(s):
SAND2014-1467J; 504888
Journal Information:
ECS Transactions, Journal Name: ECS Transactions Journal Issue: 4 Vol. 61; ISSN 1938-6737
Country of Publication:
United States
Language:
English

Similar Records

Wafer-Level Step-Stressing of InGaP/GaAs HBTs.
Conference · Thu May 01 00:00:00 EDT 2014 · OSTI ID:1143307
Thermal Stressing of InGaP/GaAs HBTs.
Conference · Fri Apr 01 00:00:00 EDT 2011 · OSTI ID:1141104
Copy of Thermal Stressing of InGaP/GaAs HBTs.
Conference · Fri Apr 01 00:00:00 EDT 2011 · OSTI ID:1141120

Related Subjects