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Si and SiGe based double top gated accumulation mode single electron transistors for quantum bits.

Conference ·
OSTI ID:1143071
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Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1143071
Report Number(s):
SAND2008-3561C; 517363
Country of Publication:
United States
Language:
English

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