Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Highly Aligned Template-Free Growth and Characterization of Vertical GaN Nanowire Arrays on Sapphire by Metal-Organic Chemical Vapor Deposition.

Journal Article · · Nano Technology
OSTI ID:1141318

Abstract not provided.

Research Organization:
Sandia National Laboratories Livermore, CA; Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1141318
Report Number(s):
SAND2006-5261J; 506544
Journal Information:
Nano Technology, Journal Name: Nano Technology
Country of Publication:
United States
Language:
English

Similar Records

Controlled Highly Aligned Growth of GaN Nanowires on Sapphire.
Conference · Tue May 01 00:00:00 EDT 2007 · OSTI ID:1722981

Controlled Highly Aligned Growth of GaN Nanowires on Sapphire.
Conference · Fri Jun 01 00:00:00 EDT 2007 · OSTI ID:1721575

Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire
Journal Article · Fri Apr 25 00:00:00 EDT 2025 · APL Materials · OSTI ID:2562989

Related Subjects