Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire

Hu, Chenxi; Thirupakuzi Vangipuram, Vijay Gopal; Chae, Christopher; Turan, Ilteris K.; Hoven, Nichole; Lambrecht, Walter R. L.; Hwang, Jinwoo; Ijiri, Yumi; Zhao, Hongping; Kash, Kathleen

doi:10.1063/5.0265613

Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire

Journal Article · Fri Apr 25 00:00:00 EDT 2025 · APL Materials

DOI:https://doi.org/10.1063/5.0265613· OSTI ID:2562989

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MgGeN2 films were synthesized using metal-organic chemical vapor deposition on GaN/c-sapphire templates and c-plane sapphire substrates. Energy-dispersive x-ray spectroscopy was used to estimate the cation composition ratios. To mitigate magnesium evaporation, the films were grown at pyrometer temperature 745 °C with a wafer rotation speed of 1000 rpm. Growth rates were determined by fitting energy-dispersive x-ray spectroscopy spectra to film thicknesses using NIST DTSA-II software. The thickness estimates determined by this method were consistent with scanning transmission electron microscopy measurements done for selected samples. Scanning electron microscopy images revealed faceted surfaces indicative of a tendency toward three-dimensional growth. X-ray diffraction spectra confirmed that the films were highly crystalline and exhibited preferential orientation in alignment with the substrate. Atomic force microscopy measurements show that film thicknesses are consistent across samples grown on both GaN templates and sapphire substrates, with typical roughnesses around 10 nm. Transmittance spectra of films grown on double-side-polished sapphire substrates yielded band gaps of 4.28 ± 0.06 eV for samples exhibiting close-to-ideal stoichiometry. Comparison of the measured spectra with ab initio calculations are in good agreement both near the bandgap and at higher energies where excitation is into higher-lying bands. These findings provide insight into the growth and characterization of MgGeN2, contributing to the development of this material for potential applications in optoelectronics and power electronics.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: NONE; SC0008933

OSTI ID:: 2562989

Journal Information:: APL Materials, Journal Name: APL Materials Journal Issue: 4 Vol. 13; ISSN 2166-532X

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

References (26)

Band Gaps, Band‐Offsets, Disorder, Stability Region, and Point Defects in II‐IV‐N ₂ Semiconductors Lyu, Sai; Skachkov, Dmitry; Kash, Kathleen physica status solidi (a), Vol. 216, Issue 15 https://doi.org/10.1002/pssa.201800875	journal	February 2019
Is Scanning Electron Microscopy/Energy Dispersive X-ray Spectrometry (SEM/EDS) Quantitative?: Quantitative SEM/EDS analysis Newbury, Dale E.; Ritchie, Nicholas W. M. Scanning, Vol. 35, Issue 3 https://doi.org/10.1002/sca.21041	journal	August 2012
Performing elemental microanalysis with high accuracy and high precision by scanning electron microscopy/silicon drift detector energy-dispersive X-ray spectrometry (SEM/SDD-EDS) Newbury, Dale E.; Ritchie, Nicholas W. M. Journal of Materials Science, Vol. 50, Issue 2 https://doi.org/10.1007/s10853-014-8685-2	journal	November 2014
Growth of II-IV-V2 chalcopyrite nitrides by molecular beam epitaxy van Nostrand, J. E.; Albrecht, J. D.; Cortez, R. Journal of Electronic Materials, Vol. 34, Issue 10 https://doi.org/10.1007/s11664-005-0261-8	journal	October 2005
Nitrides and oxynitrides: Preparation, crystal chemistry and properties Marchand, Roger; Laurent, Yves; Guyader, Jean Journal of the European Ceramic Society, Vol. 8, Issue 4 https://doi.org/10.1016/0955-2219(91)90096-i	journal	January 1991
DFT band alignment of polar and nonpolar GaN/MgGeN2, ZnO/MgGeN2 and GaN/ZnO heterostructures for optoelectronic device design Kaewmeechai, Chaiyawat; Laosiritaworn, Yongyut; Jaroenjittichai, Atchara Punya Applied Surface Science, Vol. 533 https://doi.org/10.1016/j.apsusc.2020.147503	journal	December 2020
Progress in Modeling of III-Nitride MOVPE Dauelsberg, Martin; Talalaev, Roman Progress in Crystal Growth and Characterization of Materials, Vol. 66, Issue 3 https://doi.org/10.1016/j.pcrysgrow.2020.100486	journal	August 2020
Numerical study of solar cells based on ZnSnN2 structure Laidouci, A.; Aissat, A.; Vilcot, J. P. Solar Energy, Vol. 211 https://doi.org/10.1016/j.solener.2020.09.025	journal	November 2020
Quasiparticle self-consistent GW band structures of Mg-IV-N2 compounds: The role of semicore d states Lyu, Sai; Lambrecht, Walter R. L. Solid State Communications, Vol. 299 https://doi.org/10.1016/j.ssc.2019.113664	journal	September 2019
Spectrum Simulation in DTSA-II Ritchie, Nicholas W. M. Microscopy and Microanalysis, Vol. 15, Issue 5 https://doi.org/10.1017/s1431927609990407	journal	September 2009
Band Structure Engineering Based on InGaN/ZnGeN₂ Heterostructure Quantum Wells for Visible Light Emitters Karim, Md Rezaul; Dinushi Jayatunga, Benthara Hewage; Zhang, Kaitian Crystal Growth & Design, Vol. 22, Issue 1 https://doi.org/10.1021/acs.cgd.1c00630	journal	November 2021
Metal–Organic Chemical Vapor Deposition Growth of ZnGeN ₂ Films on Sapphire Karim, Md Rezaul; Jayatunga, Benthara Hewage Dinushi; Feng, Zixuan Crystal Growth & Design, Vol. 19, Issue 8 https://doi.org/10.1021/acs.cgd.9b00560	journal	July 2019
Heteroepitaxial Integration of ZnGeN ₂ on GaN Buffers Using Molecular Beam Epitaxy Tellekamp, M. Brooks; Melamed, Celeste L.; Norman, Andrew G. Crystal Growth & Design, Vol. 20, Issue 3 https://doi.org/10.1021/acs.cgd.9b01578	journal	February 2020
Band Offset Engineering in ZnSnN ₂ -Based Heterojunction for Low-Cost Solar Cells Javaid, Kashif; Wu, Weihua; Wang, Jun ACS Photonics, Vol. 5, Issue 6 https://doi.org/10.1021/acsphotonics.8b00427	journal	May 2018
Structure and lattice dynamics of the wide band gap semiconductors MgSiN ₂ and MgGeN ₂ Råsander, M.; Quirk, J. B.; Wang, T. Journal of Applied Physics, Vol. 122, Issue 8 https://doi.org/10.1063/1.4985775	journal	August 2017
Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN ₂ films grown on GaN by metalorganic chemical vapor deposition Karim, Md Rezaul; Jayatunga, Benthara Hewage Dinushi; Zhu, Menglin AIP Advances, Vol. 10, Issue 6 https://doi.org/10.1063/1.5137767	journal	June 2020
Vapour pressures of cyclopentadiene and Bis(cyclopentadienyl)magnesium Hull, Hs; Reid, Af; Turnbull, Ag Australian Journal of Chemistry, Vol. 18, Issue 2 https://doi.org/10.1071/ch9650249	journal	January 1965
Band alignment of III-N, ZnO and II–IV-N ₂ semiconductors from the electron affinity rule Lyu, Sai; Lambrecht, Walter R. L. Journal of Physics D: Applied Physics, Vol. 53, Issue 1 https://doi.org/10.1088/1361-6463/ab4baa	journal	October 2019
Heterovalent ternary II-IV-N2 compounds: perspectives for a new class of wide-band-gap nitrides Lambrecht, Walter R. L.; Punya, Atchara III-Nitride Semiconductors and their Modern Devices https://doi.org/10.1093/acprof:oso/9780199681723.003.0015	book	August 2013
Quaternary MgSiN2 -GaN alloy semiconductors for deep UV applications Dernek, Ozan; Lambrecht, Walter R. L. Physical Review B, Vol. 106, Issue 23 https://doi.org/10.1103/physrevb.106.235122	journal	December 2022
Comparison of interband related optical transitions and excitons in ZnGeN2 and GaN Dernek, Ozan; Lambrecht, Walter R. L. Physical Review B, Vol. 109, Issue 12 https://doi.org/10.1103/physrevb.109.125133	journal	March 2024
Improved tetrahedron method for Brillouin-zone integrations Blöchl, Peter E.; Jepsen, O.; Andersen, O. K. Physical Review B, Vol. 49, Issue 23 https://doi.org/10.1103/physrevb.49.16223	journal	June 1994
Quasiparticle band structure of Zn-IV-N 2 compounds Punya, Atchara; Lambrecht, Walter R. L.; van Schilfgaarde, Mark Physical Review B, Vol. 84, Issue 16 https://doi.org/10.1103/physrevb.84.165204	journal	October 2011
Electronic band structure of Mg − IV − N 2 compounds in the quasiparticle-self-consistent G W approximation Jaroenjittichai, Atchara Punya; Lambrecht, Walter R. L. Physical Review B, Vol. 94, Issue 12 https://doi.org/10.1103/physrevb.94.125201	journal	September 2016
Isotope effects on the optical spectra of semiconductors Cardona, Manuel; Thewalt, M. L. W. Reviews of Modern Physics, Vol. 77, Issue 4 https://doi.org/10.1103/revmodphys.77.1173	journal	November 2005
Structure de Mg Si N2 et Mg Ge N2 David, Jean; Laurent, Yves; Lang, Jean Bulletin de la Société française de Minéralogie et de Cristallographie, Vol. 93, Issue 2 https://doi.org/10.3406/bulmi.1970.6448	journal	January 1970

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