Energy spread of ion beams generated in multicusp ion sources

Conference · Sat Apr 01 04:00:00 EST 1995

OSTI ID:114036

Sarstedt, M; Herz, P; Kunkel, W B ^[1]

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1. and others

For the production of future microelectronics devices, various alternate methods are currently being considered to replace the presently used method of lithography with ion beam lithography. One of these methods is the Ion Projection Lithography (IPL), which aims at the possibility of projecting sub-0.25 {mu}m patterns of a stencil mask onto a wafer substrate. In order to keep the chromatic aberrations below 25 nm, an ion source which delivers a beam with energy spread of less than 3 eV is desired. For this application, multicusp ion sources are being considered. We measure the longitudinal energy spread of the plasma ions by using a two-grid electrostatic energy analyzer. The energy spread of the extracted beam is measured by a high-voltage retarding-field energy analyzer. In order to obtain the transverse ion temperature, a parallel-plate scanner is being set up to study the beam emittance. In this paper, comparisons are made for different ion source configurations.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 114036
• Report Number(s): LBL--37147; CONF-950512--334; ON: DE96000189; CRN: C/LBL--BG-94-212.00
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
BEAM CURRENTS
ENERGY SPECTRA
FABRICATION
ION BEAMS
ION SOURCES
MASKING
MICROELECTRONIC CIRCUITS