Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication
Patent
·
OSTI ID:1132783
Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-08GO28308
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Number(s):
- 8,735,204
- Application Number:
- 13/744,152
- OSTI ID:
- 1132783
- Country of Publication:
- United States
- Language:
- English
Using silicon injection phenomenon during fire-through contact formation to improve process control and performance of screen-printed multicrystalline-silicon solar cells
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conference | June 2010 |
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