Catalyst Composition and Impurity-dependent Kinetics of Nanowire Heteroepitaxy
The mechanisms and kinetics of axial Ge-Si nanowire heteroepitaxial growth based on the tailoring of the Au catalyst composition via Ga alloying are studied by environmental transmission electron microscopy combined with systematic ex-situ CVD calibrations. The morphology of the Ge-Si heterojunction, in particular the extent of a local, asymmetric increase in nanowire diameter, is found to depend on the Ga composition of the catalyst, on the TMGa precursor exposure temperature, and on the presence of dopants. To rationalize the findings, a general nucleation-based model for nanowire heteroepitaxy is established which is anticipated to be relevant to a wide range of material systems and device-enabling heterostructures.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 1132698
- Report Number(s):
- PNNL-SA-95600; 47607; KP1704020
- Journal Information:
- ACS Nano, 7(9):7689-7697, Journal Name: ACS Nano, 7(9):7689-7697
- Country of Publication:
- United States
- Language:
- English
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