Structural defects in GaN revealed by Transmission Electron Microscopy

Liliental-Weber, Zuzanna

doi:10.7567/JJAP.53.100205

Structural defects in GaN revealed by Transmission Electron Microscopy

Journal Article · Mon Sep 08 00:00:00 UTC 2014 · Japanese Journal of Applied Physics

DOI:https://doi.org/10.7567/JJAP.53.100205· OSTI ID:1131027

Liliental-Weber, Zuzanna ^[1]

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division

This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Lastly, some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1131027

Report Number(s):: LBNL--6624E

Journal Information:: Japanese Journal of Applied Physics, Journal Name: Japanese Journal of Applied Physics Journal Issue: 10 Vol. 53; ISSN 0021-4922

Publisher:: Japan Society of Applied PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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