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Mutually injection locked lasers for enhanced frequency response

Patent ·
OSTI ID:1128693

Semiconductor light-emitting devices; methods of forming semi-conductor light emitting devices, and methods of operating semi-conductor light emitting devices are provided. A semiconductor light-emitting device includes a first laser section monolithically integrated with a second laser section on a common substrate. Each laser section has a phase section, a gain section and at least one distributed Bragg reflector (DBR) structure. The first laser section and the second laser section are optically coupled to permit optical feedback therebetween. Each phase section is configured to independently tune a respective one of the first laser section and second laser section relative to each other.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
8,687,665
Application Number:
13/233,221
OSTI ID:
1128693
Country of Publication:
United States
Language:
English

References (21)

Microwave modulation of a quantum-well laser with and without external optical injection journal July 2001
Mechanism for Modulation Response Improvement in Mutually Injection-Locked Semiconductor Lasers journal March 2011
Novel cascaded injection-locked 1.55-μm VCSELs with 66 GHz modulation bandwidth journal January 2007
Modulation Response Improvement With Isolator-Free Injection-Locking journal July 2009
Theory of emission from an active photonic lattice journal January 2006
Modulation response in isolator-free MOPA and injection-locked laser configurations conference September 2008
Modulation bandwidth enhancement and nonlinear distortion suppression in directly modulated monolithic injection-locked DFB lasers
  • Sung, H. -K.; Jung, T.
  • MWP 2003 International Topical Meeting on Microwave Photonics, 2003., MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003. https://doi.org/10.1109/MWP.2003.1422816
conference January 2003
Modulation bandwidth, noise, and stability of a semiconductor laser subject to strong injection locking journal October 1997
Optoelectronic Oscillators Using Direct-Modulated Semiconductor Lasers Under Strong Optical Injection journal January 2009
Effects of direct current modulation on a 60 GHz mm-wave carrier generated by master/slave optical sideband injection locking conference January 1999
Frequency Response Enhancement of Optical Injection-Locked Lasers journal January 2008
Dynamics in isolator-free injection-locked lasers conference January 2009
Direct modulation bandwidth enhancement of strongly injection-locked SG-DBR laser journal January 2010
Optically-injection locked tunable multimode VCSEL for WDM passive optical networks conference August 2008
Optical Properties and Modulation Characteristics of Ultra-Strong Injection-Locked Distributed Feedback Lasers journal January 2007
Optical Single Sideband Modulation Using Strong Optical Injection-Locked Semiconductor Lasers journal July 2007
Monolithically integrated active components: a quantum-well intermixing approach journal March 2005
Microwave performance of optically injection-locked VCSELs journal February 2006
Bandwidth Enhancement by Master Modulation of Optical Injection-Locked Lasers journal August 2008
35-GHz Intrinsic Bandwidth for Direct Modulation in 1.3-$mu$m Semiconductor Lasers Subject to Strong Injection Locking journal April 2004
A quantum-well-intermixing process for wavelength-agile photonic integrated circuits journal July 2002

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