Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Pre-Photolithographic GaAs Surface Treatment for Improved Photoresist Adhesion During Wet Chemical Etching and Improved Wet Etch Profiles.

Conference ·
OSTI ID:1124405
Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1124405
Report Number(s):
SAND2010-0767C; 493171
Country of Publication:
United States
Language:
English

Similar Records

Pre-photolithographic GaAs surface treatment for improved photoresist adhesion during wet chemical etching and improved wet etch profiles.
Conference · Sat May 01 00:00:00 EDT 2010 · OSTI ID:1014645

Chemical Wet Etching of AlGaN Nanostructures.
Conference · Mon Jun 01 00:00:00 EDT 2020 · OSTI ID:1798066

Acid-Based Crystallographic Chemical Wet Etching of GaN Nanostructures.
Conference · Sat Jun 01 00:00:00 EDT 2019 · OSTI ID:1640641

Related Subjects