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Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide-semiconductor device with lateral geometry.

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3518058· OSTI ID:1122542
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Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1122542
Report Number(s):
SAND2010-6132J; 491724
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 97; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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