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Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry.

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3615288· OSTI ID:1107764
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Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1107764
Report Number(s):
SAND2011-3686J; 466102
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 99; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English

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