Mechanical control of electroresistive switching

Journal Article · Tue Jan 01 00:00:00 EST 2013 · Nano Letters

DOI:https://doi.org/10.1021/nl401411r· OSTI ID:1115346

Kim, Yunseok ^[1]; Kelly, Simon J ^[1]; Strelcov, Evgheni ^[1]; Jesse, Stephen ^[1]; Biegalski, Michael D ^[1]; Balke, Nina ^[1]; Maksymovych, Petro ^[1]; Kalinin, Sergei V ^[1]

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1. ORNL

Hysteretic metal-insulator transitions (MIT) mediated by ionic dynamics or ferroic phase transitions underpin emergent applications for non-volatile memories and logic devices. The vast majority of applications and studies have explored the MIT coupled to the electric field or temperarture. Here, we argue that MIT coupled to ionic dynamics should allow control by mechanical stimuli, the behavior we refer to as piezochemical effect. We verify this effect experimentally, and demonstrate that it allows both studying materials physics and enabling novel data storage technologies with mechanical writing and current based read-out.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1115346
• Journal Information: Nano Letters, Vol. 13, Issue 9; ISSN 1530--6984
• Country of Publication: United States
• Language: English