Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Deposition Control and Depth Profiling in TaOx Memristors.

Conference ·
OSTI ID:1111396

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1111396
Report Number(s):
SAND2013-5101C; 456547
Country of Publication:
United States
Language:
English

Similar Records

Radiation Effects in TaOx Memristors.
Conference · Sun Jul 01 00:00:00 EDT 2012 · OSTI ID:1116793

Characterizing Switching Variability in TaOx Memristors.
Conference · Wed Apr 01 00:00:00 EDT 2015 · OSTI ID:1248653

The Effects of Ionizing Radiation on TaOx-based Memristors.
Conference · Sat Jan 31 23:00:00 EST 2015 · OSTI ID:1238219

Related Subjects