Interpretation of Ultrafast Reectivity Data from Low-Temperature-Grown GaAs.
Journal Article
·
· Physical Review B
OSTI ID:1109215
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1109215
- Report Number(s):
- SAND2011-1239J; 471286
- Journal Information:
- Physical Review B, Journal Name: Physical Review B
- Country of Publication:
- United States
- Language:
- English
Similar Records
Native point defects in low-temperature-grown GaAs
Evidence for superconductivity in low-temperature--grown GaAs
Experimental evaluation of the carrier lifetime in GaAs grown at low temperature
Journal Article
·
Mon Jul 10 00:00:00 EDT 1995
· Applied Physics Letters
·
OSTI ID:69439
Evidence for superconductivity in low-temperature--grown GaAs
Journal Article
·
Mon Jun 10 00:00:00 EDT 1991
· Physical Review Letters; (USA)
·
OSTI ID:5690378
Experimental evaluation of the carrier lifetime in GaAs grown at low temperature
Journal Article
·
Tue May 15 00:00:00 EDT 2012
· Semiconductors
·
OSTI ID:22038983