Al2O3 e-Beam Evaporated onto Silicon (100)/SiO2, by XPS

Journal Article · Wed Sep 25 00:00:00 EDT 2013 · Surface Science Spectra, 20(1):43-48

DOI:https://doi.org/10.1116/11.20121102· OSTI ID:1108136

Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Samha, Hussein; Linford, Matthew R.

We report the XPS characterization of a thin film of Al2O3 (35 nm) deposited via e-beam evaporation onto silicon (100). The film was characterized with monochromatic Al Ka radiation. An XPS survey scan, an Al 2p narrow scan, and the valence band spectrum were collected. The Al2O3 thin film is used as a diffusion barrier layer for templated carbon nanotube (CNT) growth in the preparation of microfabricated thin layer chromatography plates.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 1108136
• Report Number(s): PNNL-SA-92127; 34739; KP1704020
• Journal Information: Surface Science Spectra, 20(1):43-48, Journal Name: Surface Science Spectra, 20(1):43-48
• Country of Publication: United States
• Language: English

Related Subjects

Environmental Molecular Sciences Laboratory