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Title: Optical XOR gate

Abstract

An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Inventors:
Publication Date:
Research Org.:
SNL-A (Sandia National Laboratories, Albuquerque, NM (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1107893
Patent Number(s):
8,582,931
Application Number:
12/973,470
Assignee:
Sandia Corporation (Albuquerque, NM) SNL-A
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Vawter, G. Allen. Optical XOR gate. United States: N. p., 2013. Web.
Vawter, G. Allen. Optical XOR gate. United States.
Vawter, G. Allen. Tue . "Optical XOR gate". United States. https://www.osti.gov/servlets/purl/1107893.
@article{osti_1107893,
title = {Optical XOR gate},
author = {Vawter, G. Allen},
abstractNote = {An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 12 00:00:00 EST 2013},
month = {Tue Nov 12 00:00:00 EST 2013}
}

Patent:

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