Optical data latch

Vawter, G Allen

Optical data latch

Patent · Tue Aug 31 04:00:00 EDT 2010

OSTI ID:991714

Vawter, G Allen ^[1]

Corrales, NM

An optical data latch is formed on a substrate from a pair of optical logic gates in a cross-coupled arrangement in which optical waveguides are used to couple an output of each gate to an photodetector input of the other gate. This provides an optical bi-stability which can be used to store a bit of optical information in the latch. Each optical logic gate, which can be an optical NOT gate (i.e. an optical inverter) or an optical NOR gate, includes a waveguide photodetector electrically connected in series with a waveguide electroabsorption modulator. The optical data latch can be formed on a III-V compound semiconductor substrate (e.g. an InP or GaAs substrate) from III-V compound semiconductor layers. A number of optical data latches can be cascaded to form a clocked optical data shift register.

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

Assignee:: Sardia Corporation (Albuquerque, NM)

Patent Number(s):: 7,787,719

Application Number:: 12/558,025

OSTI ID:: 991714

Country of Publication:: United States

Language:: English

References (6)

40-Gb/s Widely Tunable Transceivers Raring, James W.; Coldren, Larry A. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 13, Issue 1, p. 3-14 https://doi.org/10.1109/JSTQE.2006.885329	journal	January 2007
100-gb/s error-free wavelength conversion with a monolithic optical gate integrating a photodiode and electroabsorption modulator Yoshimatsu, T.; Kodama, S.; Yoshino, K. IEEE Photonics Technology Letters, Vol. 17, Issue 11 https://doi.org/10.1109/LPT.2005.857986	journal	November 2005
Design and Demonstration of Novel QW Intermixing Scheme for the Integration of UTC-Type Photodiodes With QW-Based Components Raring, J. W.; Skogen, E. J.; Wang, C. S. IEEE Journal of Quantum Electronics, Vol. 42, Issue 2 https://doi.org/10.1109/JQE.2005.862030	journal	February 2006
Monolithically integrated active components: a quantum-well intermixing approach Skogen, E. J.; Raring, J. W.; Morrison, G. B. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 11, Issue 2, p. 343-355 https://doi.org/10.1109/JSTQE.2005.846525	journal	March 2005
500 Gbit∕s optical gate monolithically integrating photodiode and electroabsorption modulator Kodama, S.; Yoshimatsu, T.; Ito, H. Electronics Letters, Vol. 40, Issue 9 https://doi.org/10.1049/el:20040391	journal	January 2004
2.3 picoseconds optical gate monolithically integrating photodiode and electroabsorption modulator Kodama, S.; Ito, T.; Watanabe, N. Electronics Letters, Vol. 37, Issue 19 https://doi.org/10.1049/el:20010780	journal	January 2001

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