A Defect-Based Mechanism for Efficiency Droop in GaN-Based Light Emitting Diodes.

Journal Article · Thu Sep 01 00:00:00 EDT 2011 · Applied Physics Letters

OSTI ID:1106096

Modine, Normand A.; Armstrong, Andrew; Crawford, Mary Hagerott; Chow, Weng W.

Abstract not provided.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1106096
• Report Number(s): SAND2011-6325J; 464454
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters
• Country of Publication: United States
• Language: English