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Title: Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well

Abstract

Topological insulator (TI) states have been demonstrated in materials with a narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with a sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy k∙p Hamiltonian, we show that the intrinsic polarization of materials can be utilized to simultaneously reduce the energy gap and enhance the SOI, driving the system to a TI state. The proposed system consists of ultrathin InN layers embedded into GaN, a layer structure that is experimentally achievable.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC); Center for Energy Efficient Materials (CEEM)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1105573
DOE Contract Number:  
SC0001009
Resource Type:
Journal Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 18; Related Information: CEEM partners with the University of California, Santa Barbara (lead); Purdue University; Los Alamos National Laboratory; National Renewable Energy Laboratory; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), solid state lighting, phonons, thermoelectric, bio-inspired, energy storage (including batteries and capacitors), electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Miao, M. S., Yan, Q., Van de Walle, C. G., Lou, W. K., Li, L. L., and Chang, K. Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well. United States: N. p., 2012. Web. doi:10.1103/PhysRevLett.109.186803.
Miao, M. S., Yan, Q., Van de Walle, C. G., Lou, W. K., Li, L. L., & Chang, K. Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well. United States. doi:10.1103/PhysRevLett.109.186803.
Miao, M. S., Yan, Q., Van de Walle, C. G., Lou, W. K., Li, L. L., and Chang, K. Fri . "Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well". United States. doi:10.1103/PhysRevLett.109.186803.
@article{osti_1105573,
title = {Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well},
author = {Miao, M. S. and Yan, Q. and Van de Walle, C. G. and Lou, W. K. and Li, L. L. and Chang, K.},
abstractNote = {Topological insulator (TI) states have been demonstrated in materials with a narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with a sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy k∙p Hamiltonian, we show that the intrinsic polarization of materials can be utilized to simultaneously reduce the energy gap and enhance the SOI, driving the system to a TI state. The proposed system consists of ultrathin InN layers embedded into GaN, a layer structure that is experimentally achievable.},
doi = {10.1103/PhysRevLett.109.186803},
journal = {Physical Review Letters},
issn = {0031-9007},
number = 18,
volume = 109,
place = {United States},
year = {2012},
month = {11}
}