Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Charge Relaxation in a Single-Electron Si / SiGe Double Quantum Dot

Journal Article · · Physical Review Letters
Not Available
Sponsoring Organization:
USDOE
OSTI ID:
1104285
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 4 Vol. 111; ISSN 0031-9007; ISSN PRLTAO
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

Similar Records

Termination of Two-Dimensional Metallic Conduction near the Metal-Insulator Transition in a Si / SiGe Quantum Well
Journal Article · Thu Sep 15 20:00:00 EDT 2011 · Physical Review Letters · OSTI ID:1100779

Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device
Journal Article · Wed Apr 17 20:00:00 EDT 2019 · Physical Review. X · OSTI ID:1507615

Field Tuning the g Factor in InAs Nanowire Double Quantum Dots
Journal Article · Tue Oct 18 20:00:00 EDT 2011 · Physical Review Letters · OSTI ID:1101003

Related Subjects