Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device

Xue, X.; Watson, T. F.; Helsen, J.; Ward, D. R.; Savage, D. E.; Lagally, M. G.; Coppersmith, S. N.; Eriksson, M. A.; Wehner, S.; Vandersypen, L. M. K.

doi:10.1103/PhysRevX.9.021011

Benchmarking Gate Fidelities in a $Si / SiGe$ Two-Qubit Device

Journal Article · Thu Apr 18 00:00:00 EDT 2019 · Physical Review. X

DOI:https://doi.org/10.1103/PhysRevX.9.021011· OSTI ID:1507615

Xue, X.; Watson, T. F.; Helsen, J.; Ward, D. R.; Savage, D. E.; Lagally, M. G.; Coppersmith, S. N.; Eriksson, M. A.; Wehner, S.; Vandersypen, L. M. K.

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Research Organization:: Univ. of Wisconsin, Madison, WI (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC)

Grant/Contract Number:: FG02-03ER46028

OSTI ID:: 1507615

Alternate ID(s):: OSTI ID: 1609468

Journal Information:: Physical Review. X, Journal Name: Physical Review. X Journal Issue: 2 Vol. 9; ISSN PRXHAE; ISSN 2160-3308

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Benchmarking Gate Fidelities in a Si / SiGe Two-Qubit Device

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Benchmarking Gate Fidelities in a $Si / SiGe$ Two-Qubit Device