Origin of background electron concentration in InxGa1-xN alloys

Pantha, B. N.; Wang, H.; Khan, N.; Lin, J. Y.; Jiang, H. X.

doi:10.1103/PhysRevB.84.075327

Title: Origin of background electron concentration in In_xGa_1-xN alloys

Journal Article · Mon Aug 15 00:00:00 EDT 2011 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.84.075327· OSTI ID:1100551

Pantha, B. N.; Wang, H.; Khan, N.; Lin, J. Y.; Jiang, H. X.

The origin of high background electron concentration (n) in In_xGa_1-xN alloys has been investigated. A shallow donor was identified as having an energy level (E_D1) that decreases with x (E_D1 = 16 meV at x = 0 and E_D1 = 0 eV at x ~ 0.5) and that crossover the conduction band at x ~ 0.5. This shallow donor is believed to be the most probable cause of high n in InGaN. This understanding is consistent with the fact that n increases sharply with an increase in x and becomes constant for x > 0.5. A continuous reduction in n was obtained by increasing the V/III ratio during the epilayer growth, suggesting that nitrogen vacancy-related impurities are a potential cause of the shallow donors and high background electron concentration in InGaN

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Sponsoring Organization:: USDOE

OSTI ID:: 1100551

Journal Information:: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Vol. 84 Journal Issue: 7; ISSN 1098-0121

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 36 works

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References (33)

The Blue Laser Diode Nakamura, Shuji; Fasol, Gerhard https://doi.org/10.1007/978-3-662-03462-0	book	January 1997
The nature of nitrogen related point defects in common forms of InN Butcher, K. S. A.; Fernandes, A. J.; Chen, P. P. -T. Journal of Applied Physics, Vol. 101, Issue 12 https://doi.org/10.1063/1.2736654	journal	June 2007
Experimental evidence of different hydrogen donors in $n$ -type InN Pettinari, G.; Masia, F.; Capizzi, M. Physical Review B, Vol. 77, Issue 12 https://doi.org/10.1103/PhysRevB.77.125207	journal	March 2008
Shallow and Deep Level Defects in GaN Götz, W.; Johnson, N. M.; Bour, D. P. MRS Proceedings, Vol. 395 https://doi.org/10.1557/PROC-395-443	journal	January 1995
GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation Sztein, Alexander; Ohta, Hiroaki; Sonoda, Junichi Applied Physics Express, Vol. 2, Issue 11 https://doi.org/10.1143/APEX.2.111003	journal	November 2009
Ammonia: A source of hydrogen dopant for InN layers grown by metal organic vapor phase epitaxy Ruffenach, S.; Moret, M.; Briot, O. Applied Physics Letters, Vol. 95, Issue 4 https://doi.org/10.1063/1.3189212	journal	July 2009
Observation of a hydrogenic donor in the luminescence of electron-irradiated GaN Yang, Qing; Feick, Henning; Weber, Eicke R. Applied Physics Letters, Vol. 82, Issue 18 https://doi.org/10.1063/1.1570943	journal	May 2003
In-polar InN grown by plasma-assisted molecular beam epitaxy Gallinat, Chad S.; Koblmüller, Gregor; Brown, Jay S. Applied Physics Letters, Vol. 89, Issue 3 https://doi.org/10.1063/1.2234274	journal	July 2006
Thermoelectric properties of InxGa1−xN alloys Pantha, B. N.; Dahal, R.; Li, J. Applied Physics Letters, Vol. 92, Issue 4 https://doi.org/10.1063/1.2839309	journal	January 2008
Solid phase immiscibility in GaInN Ho, I‐hsiu; Stringfellow, G. B. Applied Physics Letters, Vol. 69, Issue 18 https://doi.org/10.1063/1.117683	journal	October 1996
Defect Donor and Acceptor in GaN Look, D. C.; Reynolds, D. C.; Hemsky, J. W. Physical Review Letters, Vol. 79, Issue 12 https://doi.org/10.1103/PhysRevLett.79.2273	journal	September 1997
High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap Neufeld, Carl J.; Toledo, Nikholas G.; Cruz, Samantha C. Applied Physics Letters, Vol. 93, Issue 14 https://doi.org/10.1063/1.2988894	journal	October 2008
The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN Gallinat, Chad S.; Koblmüller, Gregor; Speck, James S. Applied Physics Letters, Vol. 95, Issue 2 https://doi.org/10.1063/1.3173202	journal	July 2009
The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction Ayers, J. E. Journal of Crystal Growth, Vol. 135, Issue 1-2 https://doi.org/10.1016/0022-0248(94)90727-7	journal	January 1994
Suppression of phase separation in InGaN due to elastic strain Karpov, S. Yu. MRS Internet Journal of Nitride Semiconductor Research, Vol. 3 https://doi.org/10.1557/S1092578300000880	journal	January 1998
Free electron behavior in InN: On the role of dislocations and surface electron accumulation Darakchieva, V.; Hofmann, T.; Schubert, M. Applied Physics Letters, Vol. 94, Issue 2 https://doi.org/10.1063/1.3065030	journal	January 2009
InGaN/GaN multiple quantum well solar cells with long operating wavelengths Dahal, R.; Pantha, B.; Li, J. Applied Physics Letters, Vol. 94, Issue 6 https://doi.org/10.1063/1.3081123	journal	February 2009
High mobility InN epilayers grown on AlN epilayer templates Khan, N.; Sedhain, A.; Li, J. Applied Physics Letters, Vol. 92, Issue 17 https://doi.org/10.1063/1.2917473	journal	April 2008
Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material Darakchieva, V.; Lorenz, K.; Barradas, N. P. Applied Physics Letters, Vol. 96, Issue 8 https://doi.org/10.1063/1.3327333	journal	February 2010
Direct hydrogen gas generation by using InGaN epilayers as working electrodes Li, J.; Lin, J. Y.; Jiang, H. X. Applied Physics Letters, Vol. 93, Issue 16 https://doi.org/10.1063/1.3006332	journal	October 2008
Small band gap bowing in In1−xGaxN alloys Wu, J.; Walukiewicz, W.; Yu, K. M. Applied Physics Letters, Vol. 80, Issue 25 https://doi.org/10.1063/1.1489481	journal	June 2002
Single phase InxGa1−xN (0.25≤x≤0.63) alloys synthesized by metal organic chemical vapor deposition Pantha, B. N.; Li, J.; Lin, J. Y. Applied Physics Letters, Vol. 93, Issue 18 https://doi.org/10.1063/1.3006432	journal	November 2008
Sources of unintentional conductivity in InN Janotti, Anderson; Van de Walle, Chris G. Applied Physics Letters, Vol. 92, Issue 3 https://doi.org/10.1063/1.2832369	journal	January 2008
Unusual properties of the fundamental band gap of InN Wu, J.; Walukiewicz, W.; Yu, K. M. Applied Physics Letters, Vol. 80, Issue 21 https://doi.org/10.1063/1.1482786	journal	May 2002
Design and characterization of GaN∕InGaN solar cells Jani, Omkar; Ferguson, Ian; Honsberg, Christiana Applied Physics Letters, Vol. 91, Issue 13 https://doi.org/10.1063/1.2793180	journal	September 2007
Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap Davydov, V. Yu.; Klochikhin, A. A.; Seisyan, R. P. physica status solidi (b), Vol. 229, Issue 3 https://doi.org/10.1002/1521-3951(200202)229:3%3CR1::AID-PSSB99991%3E3.0.CO;2-O	journal	February 2002
Identification of Si and O donors in hydride-vapor-phase epitaxial GaN Moore, W. J.; Freitas, J. A.; Braga, G. C. B. Applied Physics Letters, Vol. 79, Issue 16 https://doi.org/10.1063/1.1411985	journal	October 2001
Improved Electrical Properties of InN by High-Temperature Annealing with In Situ Capped SiN _x Layers Huang, Wei; Yoshimoto, Masahiro; Taguchi, Kohshi Japanese Journal of Applied Physics, Vol. 43, Issue 1A/B https://doi.org/10.1143/JJAP.43.L97	journal	December 2003
Origin of the n-type conductivity of InN: The role of positively charged dislocations Piper, L. F. J.; Veal, T. D.; McConville, C. F. Applied Physics Letters, Vol. 88, Issue 25 https://doi.org/10.1063/1.2214156	journal	June 2006
Electrical and optical properties of p-type InGaN Pantha, B. N.; Sedhain, A.; Li, J. Applied Physics Letters, Vol. 95, Issue 26 https://doi.org/10.1063/1.3279149	journal	December 2009
Donor and acceptor concentrations in degenerate InN Look, D. C.; Lu, H.; Schaff, W. J. Applied Physics Letters, Vol. 80, Issue 2 https://doi.org/10.1063/1.1432742	journal	January 2002
Model for the thickness dependence of electron concentration in InN films Cimalla, V.; Lebedev, V.; Morales, F. M. Applied Physics Letters, Vol. 89, Issue 17 https://doi.org/10.1063/1.2364666	journal	October 2006
Evolution of phase separation in In-rich InGaN alloys Pantha, B. N.; Li, J.; Lin, J. Y. Applied Physics Letters, Vol. 96, Issue 23 https://doi.org/10.1063/1.3453563	journal	June 2010

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