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Title: Fragility of Surface States and Robustness of Topological Order in Bi2Se3 against Oxidation

Journal Article · · Physical Review Letters

Sponsoring Organization:
USDOE
OSTI ID:
1099274
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Vol. 108 Journal Issue: 9; ISSN 0031-9007
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 45 works
Citation information provided by
Web of Science

References (25)

Topological insulators and superconductors journal October 2011
Induced spin texture in semiconductor/topological insulator heterostructures journal August 2011
Topological insulators with inversion symmetry journal July 2007
Kramers' theorem in the relativistic electronic structure calculation journal September 1986
CO Oxidation Facilitated by Robust Surface States on Au-Covered Topological Insulators journal July 2011
Colloquium: Topological insulators journal November 2010
Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3 journal June 2009
Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi 2 Te 3 and Sb 2 Te 3 journal September 2009
Observation of a large-gap topological-insulator class with a single Dirac cone on the surface journal May 2009
Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3 journal November 2010
Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface journal May 2009
Topological surface states protected from backscattering by chiral spin texture journal August 2009
Molecular Beam Epitaxial Growth of Topological Insulators journal March 2011
A topological Dirac insulator in a quantum spin Hall phase journal April 2008
Half-Heusler ternary compounds as new multifunctional experimental platforms for topological quantum phenomena journal May 2010
Simultaneous Quantization of Bulk Conduction and Valence States through Adsorption of Nonmagnetic Impurities on Bi 2 Se 3 journal August 2011
ABINIT: First-principles approach to material and nanosystem properties journal December 2009
Oscillatory effects and the magnetic susceptibility of carriers in inversion layers journal November 1984
Experimental Demonstration of Topological Surface States Protected by Time-Reversal Symmetry journal December 2009
Topological Invariants in Fermi Systems with Time-Reversal Invariance journal September 1988
A brief introduction to the ABINIT software package journal January 2005
Molecular Spectra and Molecular Structure book January 1979
Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit journal June 2010
Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi 2 Se 3 journal May 2011
Spin-Charge Separation in the Quantum Spin Hall State journal August 2008

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