Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi{sub 2}Se{sub 3} and Sb{sub 2}Te{sub 3} Topological Insulators
- St. Petersburg State University (Russian Federation)
- Russian Academy of Sciences, Sobolev Institute of Geology and Mineralogy, Siberian Branch (Russian Federation)
- Novosibirsk State University (Russian Federation)
The effect of an ultrathin Pb film deposited on the surface of Bi{sub 2}Se{sub 3} and Sb{sub 2}Te{sub 3} compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.
- OSTI ID:
- 22749897
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 126, Issue 4; Other Information: Copyright (c) 2018 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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