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Surface Origin of High Conductivities in Undoped In2O3 Thin Films

Journal Article · · Physical Review Letters

Not Available

Sponsoring Organization:
USDOE
OSTI ID:
1098541
Alternate ID(s):
OSTI ID: 1381522
OSTI ID: 1039476
OSTI ID: 1067185
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 1 Vol. 108; ISSN 0031-9007; ISSN PRLTAO
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

References (28)

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Variable-Temperature Electrical Measurements of Zinc Oxide/Tin Oxide-Cosubstituted Indium Oxide journal January 2002
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Magnetoresistance of Single Crystals of Indium Oxide journal December 1964
Defect structure studies of bulk and nano-indium-tin oxide journal October 2004
Halogen n-type doping of chalcopyrite semiconductors journal January 2005
Evidence for surface dipole modifications in In2O3-based transparent conductors journal June 2008
Surface oxygen vacancy origin of electron accumulation in indium oxide journal June 2011
Surface structure of Sn-doped In 2 O 3 (111) thin films by STM journal December 2008
From ultrasoft pseudopotentials to the projector augmented-wave method journal January 1999
Magnetic interactions of Cr − Cr and Co − Co impurity pairs in ZnO within a band-gap corrected density functional approach journal June 2008
Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs journal December 2008
Semiconductor thermochemistry in density functional calculations journal December 2008
Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In 2 O 3 journal May 2009
Hydrogen doping in indium oxide: An ab initio study journal November 2009
Many-body G W calculation of the oxygen vacancy in ZnO journal March 2010
Rich Variety of Defects in ZnO via an Attractive Interaction between O Vacancies and Zn Interstitials: Origin of n -Type Doping journal February 2009
Intrinsic n -Type Behavior in Transparent Conducting Oxides: A Comparative Hybrid-Functional Study of In 2 O 3 , SnO 2 , and ZnO journal December 2009
Comment on “Intrinsic n -type Behavior in Transparent Conducting Oxides: A Comparative Hybrid-Functional Study of In 2 O 3 , SnO 2 , and ZnO” journal February 2011
Ágoston et al. Reply: journal February 2011
Generalized Gradient Approximation Made Simple journal October 1996
Hydrogen as a Cause of Doping in Zinc Oxide journal July 2000
Oxygen Vacancies as Active Sites for Water Dissociation on Rutile TiO 2 ( 110 ) journal December 2001
Evidence for Native-Defect Donors in n -Type ZnO journal November 2005
Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides journal January 2007

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